Experimental demonstration of propagation characteristics of mid-infrared photonic crystal waveguides in silicon-on-sapphire.

Mid-infrared photonic crystal waveguides in silicon.

We demonstrate the design, fabrication and characterization of mid-infrared photonic crystal waveguides on a silicon-on-insulator platform, showing guided modes in the wavelength regime between 2.9 and 3.9 µm. The characterization is performed with a proprietary intra-cavity Optical Parametric Oscillator in a free space optical setup and with a fibre coupled setup using a commercial Quantum Cas...

A study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities

We report the observation of optical bistability in Si-based photonic crystal cavities operating around 4.5 μm. Time domain measurements indicate that the source of this optical bistability is thermal, with a time constant on the order of 5 μs. Quality (Q) factor improvement is shown by the use of surface treatments (wet processes and annealing), resulting in an increase of Q-factor from 11,500...

Mid-infrared silicon-on-sapphire waveguide coupled photonic crystal microcavities

Silicon on sapphire and SOI photonic devices for mid-infrared and near-IR wavelengths

Conventional SOI waveguide technology, serving as the foundation of near-IR photonics, meets its limitation in mid-IR due to high loss associated with the buried oxide. Silicon-on-sapphire (SOS) waveguides are considered as a good mid-IR alternative, because the transparency window of sapphire is up to 6 μm and SOS waveguides are compatible with SOI technology. We show that properly-designed SO...

Femtosecond-irradiation-induced refractive-index changes and channel waveguiding in bulk Ti3+:Sapphire

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